HIRF730F Specs and Replacement
Type Designator: HIRF730F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220FP
HIRF730F substitution
- MOSFET ⓘ Cross-Reference Search
HIRF730F datasheet
hirf730.pdf
Spec. No. MOS200406 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF730 Series Pin Assignment HIRF730 / HIRF730F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source Third Generation HEXFETs from international Rectifier provide the designer with the... See More ⇒
hirf740.pdf
Spec. No. MOS200512 HI-SINCERITY Issued Date 2005.09.01 Revised Date 2005.09.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N-Channel MOSFETs provide the designer with the best combination o... See More ⇒
Detailed specifications: H8205, H8205A, H9435S, H9926S, H9926TS, HIRF630, HIRF630F, HIRF730, AON6414A, HIRF740, HIRF740F, HIRF830, HIRF830F, HIRF840, HIRF840F, BUZ11S2, BUZ11S2FI
Keywords - HIRF730F MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI5948DU | EMB20P03G
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