All MOSFET. HIRF730F Datasheet

 

HIRF730F Datasheet and Replacement


   Type Designator: HIRF730F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220FP
 

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HIRF730F Datasheet (PDF)

 7.1. Size:46K  hsmc
 hirf730.pdf pdf_icon

HIRF730F

Spec. No. : MOS200406HI-SINCERITYIssued Date : 2004.10.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/4HIRF730 Series Pin AssignmentHIRF730 / HIRF730FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThird Generation HEXFETs from international Rectifier provide thedesigner with the

 9.1. Size:48K  hsmc
 hirf740.pdf pdf_icon

HIRF730F

Spec. No. : MOS200512HI-SINCERITYIssued Date : 2005.09.01Revised Date : 2005.09.22MICROELECTRONICS CORP.Page No. : 1/4HIRF740 Series Pin AssignmentHIRF740 / HIRF740FTabN-Channel Power MOSFET (400V, 10A)3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N-Channel MOSFETs provide the designer with the best combinationo

Datasheet: H8205 , H8205A , H9435S , H9926S , H9926TS , HIRF630 , HIRF630F , HIRF730 , IRFB4110 , HIRF740 , HIRF740F , HIRF830 , HIRF830F , HIRF840 , HIRF840F , BUZ11S2 , BUZ11S2FI .

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