HIRF740 Datasheet. Specs and Replacement

Type Designator: HIRF740  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO220AB

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HIRF740 datasheet

 ..1. Size:48K  hsmc
 hirf740.pdf pdf_icon

HIRF740

Spec. No. MOS200512 HI-SINCERITY Issued Date 2005.09.01 Revised Date 2005.09.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N-Channel MOSFETs provide the designer with the best combination o... See More ⇒

 9.1. Size:46K  hsmc
 hirf730.pdf pdf_icon

HIRF740

Spec. No. MOS200406 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF730 Series Pin Assignment HIRF730 / HIRF730F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source Third Generation HEXFETs from international Rectifier provide the designer with the... See More ⇒

Detailed specifications: H8205A, H9435S, H9926S, H9926TS, HIRF630, HIRF630F, HIRF730, HIRF730F, IRFB4115, HIRF740F, HIRF830, HIRF830F, HIRF840, HIRF840F, BUZ11S2, BUZ11S2FI, BUZ353

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