All MOSFET. HIRF830F Datasheet

 

HIRF830F Datasheet and Replacement


   Type Designator: HIRF830F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220FP
 

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HIRF830F Datasheet (PDF)

 7.1. Size:46K  hsmc
 hirf830.pdf pdf_icon

HIRF830F

Spec. No. : MOS200407HI-SINCERITYIssued Date : 2004.10.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/4HIRF830 Series Pin AssignmentHIRF830 / HIRF830FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast swi

 9.1. Size:47K  hsmc
 hirf840.pdf pdf_icon

HIRF830F

Spec. No. : MOS200505HI-SINCERITYIssued Date : 2005.06.01Revised Date : 2005.06.08MICROELECTRONICS CORP.Page No. : 1/4HIRF840 Series Pin AssignmentHIRF840 / HIRF840FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast swi

Datasheet: H9926TS , HIRF630 , HIRF630F , HIRF730 , HIRF730F , HIRF740 , HIRF740F , HIRF830 , IRF630 , HIRF840 , HIRF840F , BUZ11S2 , BUZ11S2FI , BUZ353 , BUZ354 , IRF152 , IRF521FI .

History: SIA400EDJ | IRF9630SPBF

Keywords - HIRF830F MOSFET datasheet

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