HIRF830F MOSFET Datasheet: N-Ch, 500V, 4.5A. Full specification with pinout and replacement list

HIRF830F Specs and Replacement

Type Designator: HIRF830F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 100 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220FP

HIRF830F substitution

- MOSFET ⓘ Cross-Reference Search

HIRF830F datasheet

7.1. Size:46K hsmc
hirf830.pdf pdf_icon

Spec. No. MOS200407 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi... See More ⇒

9.1. Size:47K hsmc
hirf840.pdf pdf_icon

Spec. No. MOS200505 HI-SINCERITY Issued Date 2005.06.01 Revised Date 2005.06.08 MICROELECTRONICS CORP. Page No. 1/4 HIRF840 Series Pin Assignment HIRF840 / HIRF840F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi... See More ⇒

Detailed specifications: H9926TS , HIRF630 , HIRF630F , HIRF730 , HIRF730F , HIRF740 , HIRF740F , HIRF830 , 8205A , HIRF840 , HIRF840F , BUZ11S2 , BUZ11S2FI , BUZ353 , BUZ354 , IRF152 , IRF521FI .