IRF723FI MOSFET Datasheet: N-Ch, 350V, 2A. Full specification with pinout and replacement list

IRF723FI Specs and Replacement

Type Designator: IRF723FI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: ISOWATT220

IRF723FI substitution

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IRF723FI datasheet

8.1. Size:92K international rectifier
irf7233.pdf pdf_icon

PD- 91849D IRF7233 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit p... See More ⇒

8.2. Size:161K international rectifier
irf7233pbf.pdf pdf_icon

PD - 95939 IRF7233PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -12V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

8.3. Size:476K st
irf720 irf721 irf722 irf723-fi.pdf pdf_icon