IRF723FI Datasheet and Replacement
Type Designator: IRF723FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: ISOWATT220
IRF723FI substitution
IRF723FI Datasheet (PDF)
irf7233.pdf
PD- 91849DIRF7233HEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -12V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefitp
irf7233pbf.pdf
PD - 95939IRF7233PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -12V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a
Datasheet: IRF542FI , IRF543FI , IRF621FI , IRF622FI , IFR623 , IRF623FI , IRF721FI , IRF722FI , IRF530 , IRF731FI , IRF732FI , IRF733FI , IRF741FI , IRF742FI , IRF743FI , IRF821FI , IRF823FI .
History: WML80R350S
Keywords - IRF723FI MOSFET datasheet
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History: WML80R350S
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