All MOSFET. 2SJ104 Datasheet

 

2SJ104 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ104

Type of Transistor: JFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Drain Current |Id|: 0.02 A

Maximum Junction Temperature (Tj): 125 °C

Maximum Drain-Source On-State Resistance (Rds): 40 Ohm

Package: TO92

2SJ104 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ104 Datasheet (PDF)

1.1. 2sj104.pdf Size:382K _toshiba

2SJ104
2SJ104

2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications • High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS • Low R = 40 ? (typ.) (I = -5 mA) DS (ON) DSS • Complimentary to 2SK364 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol

5.1. 2sj103.pdf Size:282K _toshiba

2SJ104
2SJ104

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications • High breakdown voltage: VGDS = 50 V • High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS • Low R : R = 270 ? (typ.) (I = -5 mA) DS (ON) DS (ON) DSS • Complimentary to 2SK246 Maximum

5.2. 2sj106.pdf Size:283K _toshiba

2SJ104
2SJ104

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications • High breakdown voltage: VGDS = 50 V • High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS • Low R : R = 270 ? (typ.) (I = -5 mA) DS (ON) DS (ON)

 5.3. 2sj109.pdf Size:242K _toshiba

2SJ104
2SJ104



5.4. 2sj107.pdf Size:321K _toshiba

2SJ104
2SJ104

2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications • High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS • Low R : R = 40 ? (typ.) DS (ON) DS (ON) • Small package • Complementary to 2SK366 Maximum Ratings (Ta = = 25°C) = = Charact

 5.5. 2sj108.pdf Size:339K _toshiba

2SJ104
2SJ104

2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Y |: |Y | = 22 mS (typ.) fs fs (V = -10 V, V = 0, I = -3 mA) DS GS DSS • Low noise: En = 0.95 nV/Hz1/2 (typ.) (V = -10 V, I = -1 mA, f = 1 kHz) DS D • High i

5.6. 2sj105.pdf Size:286K _toshiba

2SJ104
2SJ104

2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications • High breakdown voltage: VGDS = 50 V • High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS • Low R : R = 270 ? (typ.) (I = -5 mA) DS (ON) DS (ON) DSS • Complimentary to 2SK330 • Sma

5.7. 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf Size:150K _no

2SJ104
2SJ104

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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