All MOSFET. 2SJ113 Datasheet


2SJ113 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ113

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 650 pF

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: TO3P

2SJ113 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2SJ113 Datasheet (PDF)

1.1. 2sj113.pdf Size:43K _hitachi


5.1. 2sj116.pdf Size:208K _hitachi


5.2. 2sj117.pdf Size:20K _hitachi


2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain G (Flange) 3. Source S 2SJ117 Absolute

 5.3. 2sj115.pdf Size:53K _no


5.4. 2sj118.pdf Size:140K _no


Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


Back to Top