2SJ113 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ113
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 650 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO3P
2SJ113 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ113 Datasheet (PDF)
2sj117.pdf
2SJ117Silicon P-Channel MOS FETADE-208-1180 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.OutlineTO-220ABD1231. Gate2. DrainG(Flange)3. SourceS2SJ117
Datasheet: BF244A , BF244B , BF244C , 19MT050XF , 2SJ104 , 2SJ107 , 2SJ108 , 2SJ109 , 20N50 , 2SJ115 , 2SJ116 , 2SJ117 , 2SJ118 , 2SJ119 , 2SJ130 , 2SJ175 , 2SJ181 .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F