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2SJ113 Specs and Replacement


   Type Designator: 2SJ113
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO3P
 

 2SJ113 substitution

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2SJ113 Specs

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2SJ113

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain G (Flange) 3. Source S 2SJ117... See More ⇒

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Detailed specifications: BF244A , BF244B , BF244C , 19MT050XF , 2SJ104 , 2SJ107 , 2SJ108 , 2SJ109 , K3569 , 2SJ115 , 2SJ116 , 2SJ117 , 2SJ118 , 2SJ119 , 2SJ130 , 2SJ175 , 2SJ181 .

Keywords - 2SJ113 MOSFET specs

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