2SJ115 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ115

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 160 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: 2-16C1H

2SJ115 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ115 Datasheet (PDF)

1.1. 2sj115.pdf Size:53K _no

5.1. 2sj113.pdf Size:43K _hitachi

5.2. 2sj117.pdf Size:20K _hitachi

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features � High speed switching � Good frequency characteristics � Wide area of safe operation � Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain G (Flange) 3. Source S 2SJ117 Absolute

5.3. 2sj116.pdf Size:208K _hitachi