2SJ119 Datasheet and Replacement
Type Designator: 2SJ119
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3P
2SJ119 substitution
2SJ119 Datasheet (PDF)
2sj117.pdf
2SJ117Silicon P-Channel MOS FETADE-208-1180 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.OutlineTO-220ABD1231. Gate2. DrainG(Flange)3. SourceS2SJ117
Datasheet: 2SJ107 , 2SJ108 , 2SJ109 , 2SJ113 , 2SJ115 , 2SJ116 , 2SJ117 , 2SJ118 , IRFB3607 , 2SJ130 , 2SJ175 , 2SJ181 , 2SJ244 , 2SJ307 , 2SJ317 , 2SJ319 , 2SJ361 .
History: CEB6086 | AP60WN2K3H
Keywords - 2SJ119 MOSFET datasheet
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History: CEB6086 | AP60WN2K3H
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