2SJ119 Datasheet. Specs and Replacement

Type Designator: 2SJ119  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 160 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO3P

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2SJ119 datasheet

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2SJ119

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 9.3. Size:20K  hitachi
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2SJ119

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain G (Flange) 3. Source S 2SJ117... See More ⇒

 9.4. Size:53K  no
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Detailed specifications: 2SJ107, 2SJ108, 2SJ109, 2SJ113, 2SJ115, 2SJ116, 2SJ117, 2SJ118, P55NF06, 2SJ130, 2SJ175, 2SJ181, 2SJ244, 2SJ307, 2SJ317, 2SJ319, 2SJ361

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