All MOSFET. 2SJ119 Datasheet

 

2SJ119 Datasheet and Replacement


   Type Designator: 2SJ119
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P
 

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2SJ119 Datasheet (PDF)

 9.1. Size:208K  hitachi
 2sj116.pdf pdf_icon

2SJ119

 9.2. Size:43K  hitachi
 2sj113.pdf pdf_icon

2SJ119

 9.3. Size:20K  hitachi
 2sj117.pdf pdf_icon

2SJ119

2SJ117Silicon P-Channel MOS FETADE-208-1180 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.OutlineTO-220ABD1231. Gate2. DrainG(Flange)3. SourceS2SJ117

 9.4. Size:53K  no
 2sj115.pdf pdf_icon

2SJ119

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Datasheet: 2SJ107 , 2SJ108 , 2SJ109 , 2SJ113 , 2SJ115 , 2SJ116 , 2SJ117 , 2SJ118 , IRFB3607 , 2SJ130 , 2SJ175 , 2SJ181 , 2SJ244 , 2SJ307 , 2SJ317 , 2SJ319 , 2SJ361 .

Keywords - 2SJ119 MOSFET datasheet

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