2SJ399 PDF Specs and Replacement
Type Designator: 2SJ399
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2170 nS
Cossⓘ - Output Capacitance: 22.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: MPAK
2SJ399 substitution
2SJ399 PDF Specs
2sj399.pdf
2SJ399 Silicon P-Channel MOS FET REJ03G0193-0200Z (Previous ADE-208-267 (Z) ) Rev.2.00 Apr.05.2004 Application Low frequency power switching Features Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source G 2. Gate 3. Drain S Note Marki... See More ⇒
Detailed specifications: 2SJ319 , 2SJ361 , 2SJ362 , 2SJ363 , 2SJ364 , 2SJ365 , 2SJ368 , 2SJ387 , AO4407 , 2SJ451 , 2SJ48 , 2SJ49 , 2SJ50 , 2SJ574 , 2SJ576 , 2SJ590LS , 2SJ601 .
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