2SJ399 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ399
SMD Transistor Code: ZF-
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.15 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 0.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2170 nS
Drain-Source Capacitance (Cd): 22.3 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: MPAK
2SJ399 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ399 Datasheet (PDF)
1.1. 2sj399.pdf 
Size:99K _renesas
2SJ399 Silicon P-Channel MOS FET REJ03G0193-0200Z (Previous ADE-208-267 (Z) ) Rev.2.00 Apr.05.2004 Application Low frequency power switching Features Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source G 2. Gate 3. Drain S Note: Marking is ZF
Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .
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MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |