2SJ399 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ399
Marking Code: ZF-
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.15 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 0.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 2170 nS
Drain-Source Capacitance (Cd): 22.3 pF
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: MPAK
2SJ399 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ399 Datasheet (PDF)
1.1. 2sj399.pdf 
Size:99K _renesas
2SJ399 Silicon P-Channel MOS FET REJ03G0193-0200Z (Previous ADE-208-267 (Z) ) Rev.2.00 Apr.05.2004 Application Low frequency power switching Features Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source G 2. Gate 3. Drain S Note: Marking is ZF
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
