All MOSFET. 2SJ399 Datasheet

 

2SJ399 Datasheet and Replacement


   Type Designator: 2SJ399
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2170 nS
   Cossⓘ - Output Capacitance: 22.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: MPAK
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2SJ399 Datasheet (PDF)

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2SJ399

2SJ399Silicon P-Channel MOS FETREJ03G0193-0200Z(Previous ADE-208-267 (Z) )Rev.2.00Apr.05.2004ApplicationLow frequency power switchingFeatures Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch.OutlineMPAK312D1. SourceG2. Gate3. DrainSNote: Marki

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRL60B216 | FHP7N65G

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