2SJ601Z Specs and Replacement
Type Designator: 2SJ601Z
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 580 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO252
2SJ601Z substitution
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2SJ601Z datasheet
2sj601.pdf
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ601 TO-251 2SJ601-Z TO-252 FEATURES Low on-state resistance RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A) ... See More ⇒
2sj601-z.pdf
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ601 TO-251 2SJ601-Z TO-252 FEATURES Low on-state resistance RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A) ... See More ⇒
2sj601-z.pdf
2SJ601-Z www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter S... See More ⇒
Detailed specifications: 2SJ451, 2SJ48, 2SJ49, 2SJ50, 2SJ574, 2SJ576, 2SJ590LS, 2SJ601, SI2302, 2SJ74, 2SK1016, 2SK1082, 2SK1086, 2SK1093, 2SK1094, 2SK1095, 2SK1096-MR
Keywords - 2SJ601Z MOSFET specs
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History: WSD30L90DN56 | IRF333 | WM01P60M | SWU8N60D | SI9435DY-T1 | IRF7902 | LD1014D
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