2SJ601Z Datasheet and Replacement
Type Designator: 2SJ601Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 580 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO252
2SJ601Z substitution
2SJ601Z Datasheet (PDF)
2sj601.pdf
PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ601SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ601 TO-2512SJ601-Z TO-252FEATURES Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)
2sj601-z.pdf
PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ601SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ601 TO-2512SJ601-Z TO-252FEATURES Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)
2sj601-z.pdf
2SJ601-Zwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter S
Datasheet: 2SJ451 , 2SJ48 , 2SJ49 , 2SJ50 , 2SJ574 , 2SJ576 , 2SJ590LS , 2SJ601 , 2N60 , 2SJ74 , 2SK1016 , 2SK1082 , 2SK1086 , 2SK1093 , 2SK1094 , 2SK1095 , 2SK1096-MR .
History: SE3404
Keywords - 2SJ601Z MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SE3404
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