All MOSFET. 2SJ601Z Datasheet

 

2SJ601Z Datasheet and Replacement


   Type Designator: 2SJ601Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO252
 

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2SJ601Z Datasheet (PDF)

 8.1. Size:54K  nec
 2sj601.pdf pdf_icon

2SJ601Z

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ601SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ601 TO-2512SJ601-Z TO-252FEATURES Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)

 8.2. Size:52K  nec
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2SJ601Z

PRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ601SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designedPART NUMBER PACKAGEfor solenoid, motor and lamp driver.2SJ601 TO-2512SJ601-Z TO-252FEATURES Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)

 8.3. Size:1408K  cn vbsemi
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2SJ601Z

2SJ601-Zwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter S

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Datasheet: 2SJ451 , 2SJ48 , 2SJ49 , 2SJ50 , 2SJ574 , 2SJ576 , 2SJ590LS , 2SJ601 , IRFZ46N , 2SJ74 , 2SK1016 , 2SK1082 , 2SK1086 , 2SK1093 , 2SK1094 , 2SK1095 , 2SK1096-MR .

History: RSD140P06FRA | BUK761R8-30C

Keywords - 2SJ601Z MOSFET datasheet

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 2SJ601Z equivalent finder
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