2SJ420 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ420
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 1100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOP8
2SJ420 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ420 Datasheet (PDF)
2sj420.pdf
Ordering number:EN5064AP-Channel Silicon MOSFET2SJ420Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2116 2.5V drive.[2SJ420]8 51 : Source2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxim
2sj424.pdf
2SJ424External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V V I = 250A, V = 0VDSS (BR) DSS 60 D GSV 20 V I 500 nA V = 20VGSS GSS GSI 5 A I 250 A V = 60V, V = 0VD DSS DS GSI 20 (Tch 150C) A V 4.0 V V = 10V, I = 250
2sj424 2sj425.pdf
2-2 MOS FETSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SJ424* -60 20 5 20 25 -500 20 -50 -60 -2.0 -4.0 -10 -2502SJ425 -60 20 8 32 30 -500 20 -250 -60 -2.0 -4
2sj425.pdf
2SJ425External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V V I = 250A, V = 0VDSS (BR) DSS 60 D GSV 20 V I 500 nA V = 20VGSS GSS GSI 8 A I 250 A V = 60V, V = 0VD DSS DS GSI 32 (Tch 150C) A V 4.0 V V = 10V, I = 250
2sj421.pdf
Ordering number:EN5077P-Channel Silicon MOSFET2SJ421Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2116 4V drive.[2SJ421]8 51 : Source2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maximum
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HX2301A
History: HX2301A
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