All MOSFET. AP06P20GJ-HF Datasheet

 

AP06P20GJ-HF Datasheet and Replacement


   Type Designator: AP06P20GJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO251
 

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AP06P20GJ-HF Datasheet (PDF)

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AP06P20GJ-HF

AP06P20GJ-HFPreliminaryAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -200V Simple Drive Requirement RDS(ON) 1.4 RoHS Compliant & Halogen-Free ID -4.7AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-251(J)ruggedized device design, low

Datasheet: AP05N50EJ-HF , AP05N50H-HF , AP05N50I , AP05N50IB-HF , AP05N50P , AP05N50S-HF , AP0603GH-HF , AP0603GM-HF , 2SK3568 , AP0704GMT-HF , AP07N70CI-H , AP0803GMP-HF , AP0803GMT-HF , AP08N60I-HF , AP08P20GP-HF , AP08P20GS-HF , AP0903GH-HF .

History: H5N60U | TSA82N30M

Keywords - AP06P20GJ-HF MOSFET datasheet

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