AP06P20GJ-HF Datasheet. Specs and Replacement

Type Designator: AP06P20GJ-HF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO251

AP06P20GJ-HF substitution

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AP06P20GJ-HF datasheet

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AP06P20GJ-HF

AP06P20GJ-HF Preliminary Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -200V Simple Drive Requirement RDS(ON) 1.4 RoHS Compliant & Halogen-Free ID -4.7A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-251(J) ruggedized device design, low... See More ⇒

Detailed specifications: AP05N50EJ-HF, AP05N50H-HF, AP05N50I, AP05N50IB-HF, AP05N50P, AP05N50S-HF, AP0603GH-HF, AP0603GM-HF, 4N60, AP0704GMT-HF, AP07N70CI-H, AP0803GMP-HF, AP0803GMT-HF, AP08N60I-HF, AP08P20GP-HF, AP08P20GS-HF, AP0903GH-HF

Keywords - AP06P20GJ-HF MOSFET specs

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