All MOSFET. AP06P20GJ-HF Datasheet

 

AP06P20GJ-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP06P20GJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO251

 AP06P20GJ-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP06P20GJ-HF Datasheet (PDF)

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 ap06p20gj-hf-pre.pdf

AP06P20GJ-HF AP06P20GJ-HF

AP06P20GJ-HFPreliminaryAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -200V Simple Drive Requirement RDS(ON) 1.4 RoHS Compliant & Halogen-Free ID -4.7AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-251(J)ruggedized device design, low

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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