All MOSFET. AP08N60I-HF Datasheet

 

AP08N60I-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP08N60I-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220F

 AP08N60I-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP08N60I-HF Datasheet (PDF)

 ..1. Size:59K  ape
 ap08n60i-hf.pdf

AP08N60I-HF AP08N60I-HF

AP08N60I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AG RoHS Compliant & Halogen-FreeSDescriptionAP08N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conv

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DMP2200UDW | PSMN3R0-30YL | PSMN1R9-40PL | BLF245

 

 
Back to Top