All MOSFET. AP08N60I-HF Datasheet

 

AP08N60I-HF Datasheet and Replacement


   Type Designator: AP08N60I-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 67 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220F
 

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AP08N60I-HF Datasheet (PDF)

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AP08N60I-HF

AP08N60I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AG RoHS Compliant & Halogen-FreeSDescriptionAP08N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC conv

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History: SM4502NHKP

Keywords - AP08N60I-HF MOSFET datasheet

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