All MOSFET. 2SK3391 Datasheet

 

2SK3391 Datasheet and Replacement


   Type Designator: 2SK3391
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 17 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: UPAK
 

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2SK3391 Datasheet (PDF)

 ..1. Size:151K  renesas
2sk3391.pdf pdf_icon

2SK3391

2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, add = 58% min. (f = 836 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-AR(Package Name : UPAK )3121. Gate31 2. Source3. Drain4. S

 8.1. Size:190K  toshiba
2sk3398.pdf pdf_icon

2SK3391

2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 0.4 m (typ.) High forward transfer admittance: |Yfs| = 9.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-mode: Vth

 8.2. Size:220K  toshiba
2sk3399.pdf pdf_icon

2SK3391

2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3399 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ) High forward transfer admittance: |Yfs| = 5.2 S (typ) Low leakage current: IDSS = 100 A (max) (VDSS = 600 V) Enhancementmode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 8.3. Size:215K  toshiba
2sk3397.pdf pdf_icon

2SK3391

2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 3.0 V (V

Datasheet: AP15P10GS , AP15P15GH-HF , AP15P15GI , AP15P15GM-HF , AP15P15GP-HF , AP15T15GH-HF , AP15T15GI-HF , AP15T15GM-HF , 4N60 , 2SK3475 , 2SK3476 , 2SK3480 , 2SK3480-S , 2SK3480-ZJ , 2SK3480-Z , 2SK3481 , 2SK3481-S .

History: GSM2319A | AP20T15GP-HF | 2SK3034 | FQU20N06TU | AONS66524

Keywords - 2SK3391 MOSFET datasheet

 2SK3391 cross reference
 2SK3391 equivalent finder
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