All MOSFET. AP1RA03GMT-HF Datasheet

 

AP1RA03GMT-HF Datasheet and Replacement


   Type Designator: AP1RA03GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 185 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00159 Ohm
   Package: PMPAK5X6
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AP1RA03GMT-HF Datasheet (PDF)

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AP1RA03GMT-HF

AP1RA03GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 1.59m Low On-resistance ID 185AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switch

Datasheet: AP18T10GH-HF , AP18T10GI , AP18T10GJ-HF , AP18T10GM-HF , AP18T10GP , AP18T20GH-HF , AP18T20GI-HF , AP1R803GMT-HF , IRF540 , AP1RC03GMT-HF , 2SK357 , 2SK359 , 2SK360 , 2SK3611 , 2SK3614 , 2SK3656 , 2SK3663 .

History: SFF40N30MUB | SRC60R680E | JCS4AN120CA | SI2308 | UT2302L-AE3 | UTT150N06 | NILMS4501NR2G

Keywords - AP1RA03GMT-HF MOSFET datasheet

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