All MOSFET. AP1RC03GMT-HF Datasheet

 

AP1RC03GMT-HF Datasheet and Replacement


   Type Designator: AP1RC03GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 260 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm
   Package: PMPAK5X6
 

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AP1RC03GMT-HF Datasheet (PDF)

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AP1RC03GMT-HF

AP1RC03GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 0.99m Low On-resistance ID 260AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switc

Datasheet: AP18T10GI , AP18T10GJ-HF , AP18T10GM-HF , AP18T10GP , AP18T20GH-HF , AP18T20GI-HF , AP1R803GMT-HF , AP1RA03GMT-HF , IRF540N , 2SK357 , 2SK359 , 2SK360 , 2SK3611 , 2SK3614 , 2SK3656 , 2SK3663 , 2SK3664 .

History: SMIRF8N65T1TL

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