All MOSFET. AP1RC03GMT-HF Datasheet

 

AP1RC03GMT-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP1RC03GMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 260 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm
   Package: PMPAK5X6

 AP1RC03GMT-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP1RC03GMT-HF Datasheet (PDF)

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 ap1rc03gmt-hf.pdf

AP1RC03GMT-HF AP1RC03GMT-HF

AP1RC03GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 0.99m Low On-resistance ID 260AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switc

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