AP2732GK Specs and Replacement

Type Designator: AP2732GK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 9 nC

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOT223

AP2732GK substitution

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AP2732GK datasheet

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 ap2732gk.pdf pdf_icon

AP2732GK

AP2732GK RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6A S D RoHS Compliant SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on- re... See More ⇒

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 ap2732gk-hf.pdf pdf_icon

AP2732GK

AP2732GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6A S D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch... See More ⇒

Detailed specifications: AP2614GY-HF, AP2615GEY-HF, AP2615GY-HF, AP2616GY-HF, AP2622GY-HF, AP2623GY, AP2625GY, AP2626GY-HF, 2N60, AP2761I-A, AP2761I-H, AP2761I-H-HF, AP2761P-A, AP2761R-A, AP2761S-A-HF, AP2762I-A-HF, AP2762I-H-HF

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