All MOSFET. AP2732GK Datasheet

 

AP2732GK Datasheet and Replacement


   Type Designator: AP2732GK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOT223
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AP2732GK Datasheet (PDF)

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AP2732GK

AP2732GKRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6ASD RoHS CompliantSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, low on-re

 0.1. Size:59K  ape
 ap2732gk-hf.pdf pdf_icon

AP2732GK

AP2732GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Lower Gate Charge RDS(ON) 26m Fast Switching Characteristic ID 8.6ASD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switch

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: OSG60R099HSZF | MTP8N50E | BF989S | IPI80N06S2L-05 | PJM2302NSA-S | BRCS035N04SDP | AP15TN1R5N

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