All MOSFET. AP2864I-A-HF Datasheet

 

AP2864I-A-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2864I-A-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 86 nC
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F

 AP2864I-A-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2864I-A-HF Datasheet (PDF)

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 ap2864i-a-hf.pdf

AP2864I-A-HF AP2864I-A-HF

AP2864I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionGDAP2864 series are specially designed as main switching devices for STO-220CFM(I)universal 90~265VA

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