All MOSFET. AP2864I-A-HF Datasheet

 

AP2864I-A-HF Datasheet and Replacement


   Type Designator: AP2864I-A-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F
 

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AP2864I-A-HF Datasheet (PDF)

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AP2864I-A-HF

AP2864I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 1.1 Simple Drive Requirement ID 7AG RoHS Compliant & Halogen-FreeSDescriptionGDAP2864 series are specially designed as main switching devices for STO-220CFM(I)universal 90~265VA

Datasheet: AP2764AI , AP2764AI-A-HF , AP2764AI-HF , AP2764AP-A-HF , AP2764I-A , AP2765I-A-HF , AP2851GO , AP2852GO , AO3407 , AP2N7002K-HF , AP2R403AGMT-HF , AP2R403GMT-HF , AP2R803AGMT-HF , AP2R803GH-HF , AP2R803GMT-HF , AP2RA04GMT-HF , AP30N30W .

History: IXTH80N20L | LSD80R350GT | PE506BA | FK330309 | CTD03N005 | DMN4009LK3 | AD8N60S

Keywords - AP2864I-A-HF MOSFET datasheet

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