All MOSFET. AP30N30WI Datasheet

 

AP30N30WI Datasheet and Replacement


   Type Designator: AP30N30WI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TO3PF
 

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AP30N30WI Datasheet (PDF)

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 ap30n30wi.pdf pdf_icon

AP30N30WI

AP30N30WIPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 250VSimple Drive Requirement RDS(ON) 68m Lower On-resistance ID 30A G RoHS CompliantSDescriptionAP30N30 from APEC provide the designer with the best combinationof f

 6.1. Size:110K  ape
 ap30n30w.pdf pdf_icon

AP30N30WI

AP30N30WPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 250VSimple Drive Requirement RDS(ON) 68m Lower On-resistance ID 36A G RoHS CompliantSDescriptionAP30N30 from APEC provide the designer with the best combination of fas

Datasheet: AP2N7002K-HF , AP2R403AGMT-HF , AP2R403GMT-HF , AP2R803AGMT-HF , AP2R803GH-HF , AP2R803GMT-HF , AP2RA04GMT-HF , AP30N30W , 20N60 , AP30P10GH-HF , AP30P10GI , AP30P10GP-HF , AP30P10GS , AP30T03GH-HF , AP30T10GH-HF , AP30T10GI-HF , AP30T10GK-HF .

History: OSG65R580FTF | IRFU2905ZPBF | P1203EV | CTLDM7120-M563 | IXFN360N10T | DMN5L06-7 | SSM6K08FU

Keywords - AP30N30WI MOSFET datasheet

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