All MOSFET. FRE160H Datasheet

 

FRE160H Datasheet and Replacement


   Type Designator: FRE160H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 700 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO258AA
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FRE160H Datasheet (PDF)

 8.1. Size:48K  intersil
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FRE160H

FRE160D, FRE160R,FRE160H41A, 100V, 0.050 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 41A, 100V, RDS(on) = 0.050TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

Datasheet: FK25SM-6 , FK30SM-5 , FK30SM-6 , FK7KM-12 , FK7SM-12 , FK7UM-12 , FK7VS-12 , FRE160D , AON6414A , FRE160R , FRE260D , FRE260H , FRE260R , FRE264D , FRE264H , FRE264R , FRE460D .

History: VBNC1303 | IRFS4010PBF

Keywords - FRE160H MOSFET datasheet

 FRE160H cross reference
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