FRE160H MOSFET. Datasheet pdf. Equivalent
Type Designator: FRE160H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 41 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 700 nS
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: TO258AA
FRE160H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRE160H Datasheet (PDF)
8.1. Size:48K intersil
fre160.pdf
fre160.pdf
FRE160D, FRE160R,FRE160H41A, 100V, 0.050 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 41A, 100V, RDS(on) = 0.050TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FK25SM-6 , FK30SM-5 , FK30SM-6 , FK7KM-12 , FK7SM-12 , FK7UM-12 , FK7VS-12 , FRE160D , IRFP260N , FRE160R , FRE260D , FRE260H , FRE260R , FRE264D , FRE264H , FRE264R , FRE460D .
