FRE160H Specs and Replacement
Type Designator: FRE160H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 700 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO258AA
FRE160H substitution
FRE160H Specs
fre160.pdf
FRE160D, FRE160R, FRE160H 41A, 100V, 0.050 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 41A, 100V, RDS(on) = 0.050 TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
Detailed specifications: FK25SM-6 , FK30SM-5 , FK30SM-6 , FK7KM-12 , FK7SM-12 , FK7UM-12 , FK7VS-12 , FRE160D , AO3400 , FRE160R , FRE260D , FRE260H , FRE260R , FRE264D , FRE264H , FRE264R , FRE460D .
Keywords - FRE160H MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
