FRE160R MOSFET. Datasheet pdf. Equivalent
Type Designator: FRE160R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 41 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 700 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO258AA
FRE160R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRE160R Datasheet (PDF)
fre160.pdf
FRE160D, FRE160R,FRE160H41A, 100V, 0.050 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 41A, 100V, RDS(on) = 0.050TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FK30SM-5 , FK30SM-6 , FK7KM-12 , FK7SM-12 , FK7UM-12 , FK7VS-12 , FRE160D , FRE160H , IRFB4110 , FRE260D , FRE260H , FRE260R , FRE264D , FRE264H , FRE264R , FRE460D , FRE460H .
History: IXFH110N15T2
History: IXFH110N15T2
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