AP42T03GP Datasheet and Replacement
Type Designator: AP42T03GP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO220
AP42T03GP substitution
AP42T03GP Datasheet (PDF)
ap42t03gp.pdf

AP42T03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 22m Fast Switching Characteristic ID 30AGSDescriptionThe Advanced Power MOSFETs APEC provide theAdvanced Power MOSFETs fromfrom APEC provide thedesigner with the best combination of fast switching,
Datasheet: AP4226AGM , AP4226BGM-HF , AP4226GM , AP4228GM , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , IRF840 , AP4405GM , AP4407GM-HF , AP4407GP , AP4407GS , AP4407I-HF , AP4409AGEM , AP4409GEM , AP4409GEP-HF .
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History: SI4622DY | VBZL80N03



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