All MOSFET. AP42T03GP Datasheet

 

AP42T03GP MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP42T03GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220

 AP42T03GP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP42T03GP Datasheet (PDF)

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 ap42t03gp.pdf

AP42T03GP AP42T03GP

AP42T03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 22m Fast Switching Characteristic ID 30AGSDescriptionThe Advanced Power MOSFETs APEC provide theAdvanced Power MOSFETs fromfrom APEC provide thedesigner with the best combination of fast switching,

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