AP42T03GP Specs and Replacement

Type Designator: AP42T03GP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO220

AP42T03GP substitution

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AP42T03GP datasheet

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AP42T03GP

AP42T03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 22m Fast Switching Characteristic ID 30A G S Description The Advanced Power MOSFETs APEC provide the Advanced Power MOSFETs fromfrom APEC provide the designer with the best combination of fast switching,... See More ⇒

Detailed specifications: AP4226AGM, AP4226BGM-HF, AP4226GM, AP4228GM, AP4230GM-HF, AP4232AGM, AP4232BGM-HF, AP4232GM-HF, IRF840, AP4405GM, AP4407GM-HF, AP4407GP, AP4407GS, AP4407I-HF, AP4409AGEM, AP4409GEM, AP4409GEP-HF

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