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FRE9160D Specs and Replacement


   Type Designator: FRE9160D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 440 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO258AA
 

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FRE9160D Specs

 7.1. Size:48K  intersil
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FRE9160D

FRE9160D, FRE9160R, FRE9160H 30A, -100V, 0.095 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 30A, -100V, RDS(on) = 0.095 TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

Detailed specifications: FRE260H , FRE260R , FRE264D , FRE264H , FRE264R , FRE460D , FRE460H , FRE460R , IRF630 , FRE9160H , FRE9160R , FRE9260D , FRE9260H , FRE9260R , FRF150D , FRF150H , FRF150R .

Keywords - FRE9160D MOSFET specs

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