AP4501GSD Datasheet and Replacement
Type Designator: AP4501GSD
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 7(5) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 5(7) nS
Cossⓘ - Output Capacitance: 150(180) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027(0.049) Ohm
Package: PDIP8
AP4501GSD substitution
AP4501GSD Datasheet (PDF)
ap4501gsd.pdf
AP4501GSDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2Simple Drive Requirement N-CH BVDSS 30V D2D1Low On-resistance D1 RDS(ON) 27m Fast Switching Characteristic ID 7A G2P-CH BVDSS -30VS2PDIP-8G1RDS(ON) 49mS1Description ID -5AThe Advanced Power
ap4501gd.pdf
AP4501GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge N-CH BVDSS 30VD2D2D1 Fast Switching Speed RDS(ON) 28mD1 PDIP-8 Package ID 7A RoHS Compliant P-CH BVDSS -30VG2S2RDS(ON) 50mPDIP-8G1S1ID -5.3ADescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with t
ap4501gh-hf.pdf
AP4501GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 18m Fast Switching Performance ID 10.2AS1G1S2 Halogen-Free Product P-CH BVDSS -30VG2RDS(ON) 50mTO-252-4LDescription ID -6.4AAdvanced Power MOSFETs from APEC provi
ap4501gm-hf.pdf
AP4501GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8 RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC pro
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