FRE9160H Specs and Replacement

Type Designator: FRE9160H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 440 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: TO258AA

FRE9160H substitution

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FRE9160H datasheet

 7.1. Size:48K  intersil
 fre9160.pdf pdf_icon

FRE9160H

FRE9160D, FRE9160R, FRE9160H 30A, -100V, 0.095 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 30A, -100V, RDS(on) = 0.095 TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

Detailed specifications: FRE260R, FRE264D, FRE264H, FRE264R, FRE460D, FRE460H, FRE460R, FRE9160D, IRF9540, FRE9160R, FRE9260D, FRE9260H, FRE9260R, FRF150D, FRF150H, FRF150R, FRF250D

Keywords - FRE9160H MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.