All MOSFET. FRE9160H Datasheet

 

FRE9160H MOSFET. Datasheet pdf. Equivalent


   Type Designator: FRE9160H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 440 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO258AA

 FRE9160H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FRE9160H Datasheet (PDF)

 7.1. Size:48K  intersil
 fre9160.pdf

FRE9160H FRE9160H

FRE9160D, FRE9160R,FRE9160H30A, -100V, 0.095 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 30A, -100V, RDS(on) = 0.095TO-258AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD

Datasheet: FRE260R , FRE264D , FRE264H , FRE264R , FRE460D , FRE460H , FRE460R , FRE9160D , IRF9540 , FRE9160R , FRE9260D , FRE9260H , FRE9260R , FRF150D , FRF150H , FRF150R , FRF250D .

 

 
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