AP4513GH Datasheet and Replacement
Type Designator: AP4513GH
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 7.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10(8) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 85(90) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042(0.075) Ohm
Package: TO252-4L
- MOSFET Cross-Reference Search
AP4513GH Datasheet (PDF)
ap4513gh.pdf

AP4513GHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10AS1G1P-CH BVDSS -35VS2G2RDS(ON) 75mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thedesigner with the best
ap4513gh-a.pdf

AP4513GH-ARoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.7AS1G1 P-CH BVDSS -35VS2G2RDS(ON) 68mTO-252-4LDescription ID -5.5AThe Advanced Power MOSFETs from APEC provide thedesigner with
ap4513gm.pdf

AP4513GM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD2D2 Low On-resistance RDS(ON) 36mD1D1 Fast Switching Performance ID 5.8AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON)
ap4513gm-hf.pdf

AP4513GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD2D2 Low On-resistance RDS(ON) 36mD1D1 Fast Switching Performance ID 5.8AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -35VG1S1SO-8RDS(ON) 68mDescription ID -4.3AThe Advanced Power MOSFETs from A
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