2SK55
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK55
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 18
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5.5
V
|Id|ⓘ - Maximum Drain Current: 0.014
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 330
Ohm
Package:
TO92
2SK55
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK55
Datasheet (PDF)
0.5. Size:231K inchange semiconductor
2sk556.pdf 
isc N-Channel MOSFET Transistor 2SK556DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
0.6. Size:236K inchange semiconductor
2sk557.pdf
isc N-Channel MOSFET Transistor 2SK557DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
0.7. Size:239K inchange semiconductor
2sk559.pdf
isc N-Channel MOSFET Transistor 2SK559DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
Datasheet: 2SK536
, 2SK538
, 2SK539
, 2SK543
, 2SK544
, 2SK545
, 2SK546
, 2SK549
, IRF640N
, AP4519GED
, AP4521GEH
, AP4521GEM
, AP4523GD
, AP4523GH
, AP4523GM
, AP4525GEH
, AP4525GEM-HF
.
