2SK560 Datasheet and Replacement
Type Designator: 2SK560
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO3P
2SK560 substitution
2SK560 Datasheet (PDF)
2sk560.pdf

isc N-Channel MOSFET Transistor 2SK560DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
Datasheet: AP4543GEM-HF , AP4543GMT-HF , AP4563AGH-HF , AP4563GH-HF , AP4563GM , AP4569GD , 2SK56 , 2SK559 , 4N60 , 2SK578 , 2SK579L , 2SK580L , 2SK579S , 2SK580S , 2SK583 , 2SK620 , 2SK655 .
History: STP601 | DMJ70H600SH3 | OSG65R260FSF | FIR8N80FG | SUD50N10-34P | IXTK150N15P | OSG60R200PSZF
Keywords - 2SK560 MOSFET datasheet
2SK560 cross reference
2SK560 equivalent finder
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History: STP601 | DMJ70H600SH3 | OSG65R260FSF | FIR8N80FG | SUD50N10-34P | IXTK150N15P | OSG60R200PSZF



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