2SK560 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK560 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

"MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1"

isc N-Channel MOSFET Transistor 2SK565 FEATURES Drain Current I =9.6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor 2SK562 FEATURES Drain Current I =39A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High speed power Switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

isc N-Channel MOSFET Transistor 2SK564 FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK566 FEATURES Drain Current I =2.9A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed especially for high voltage,high speed applications, such as off-line switching power supplies ,