AP4569GM Datasheet and Replacement
Type Designator: AP4569GM
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5.8(4.2) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 9(8) nS
Cossⓘ - Output Capacitance: 70(80) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036(0.068) Ohm
Package: SO8
- MOSFET Cross-Reference Search
AP4569GM Datasheet (PDF)
ap4569gm.pdf

AP4569GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD2D2 Fast Switching Performance RDS(ON) 36mD1D1 RoHS Compliant ID 5.8AG2P-CH BVDSS -40VS2G1S1SO-8RDS(ON) 68mDescription ID -4.2AThe Advanced Power MOSFETs from APEC provide thedesigner with the be
ap4569gh.pdf

AP4569GHPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10.5AS1G1 RoHS Compliant P-CH BVDSS -40VS2G2RDS(ON) 75mTO-252-4LDescription ID -8AThe Advanced Power MOSFETs from APEC provide t
ap4569gd.pdf

AP4569GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2Low Gate Charge N-CH BVDSS 40V D2D1D1 Fast Switching Speed RDS(ON) 52m PDIP-8 Package ID 4.8AG2 RoHS Compliant P-CH BVDSS -40VS2PDIP-8G1RDS(ON) 90mS1Description ID -3.8AThe
ap4563gh.pdf

AP4563GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 8AS1G1S2 RoHS Compliant P-CH BVDSS -40VG2RDS(ON) 36mTO-252-4LDescription ID -7.3AAdvanced Power MOSFETs from APEC provide the de
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