AP4569GM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP4569GM
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8(4.2) A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9(8) ns
Cossⓘ - Выходная емкость: 70(80) pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036(0.068) Ohm
Тип корпуса: SO8
AP4569GM Datasheet (PDF)
ap4569gm.pdf
AP4569GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD2D2 Fast Switching Performance RDS(ON) 36mD1D1 RoHS Compliant ID 5.8AG2P-CH BVDSS -40VS2G1S1SO-8RDS(ON) 68mDescription ID -4.2AThe Advanced Power MOSFETs from APEC provide thedesigner with the be
ap4569gh.pdf
AP4569GHPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10.5AS1G1 RoHS Compliant P-CH BVDSS -40VS2G2RDS(ON) 75mTO-252-4LDescription ID -8AThe Advanced Power MOSFETs from APEC provide t
ap4569gd.pdf
AP4569GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2Low Gate Charge N-CH BVDSS 40V D2D1D1 Fast Switching Speed RDS(ON) 52m PDIP-8 Package ID 4.8AG2 RoHS Compliant P-CH BVDSS -40VS2PDIP-8G1RDS(ON) 90mS1Description ID -3.8AThe
ap4563gh.pdf
AP4563GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 8AS1G1S2 RoHS Compliant P-CH BVDSS -40VG2RDS(ON) 36mTO-252-4LDescription ID -7.3AAdvanced Power MOSFETs from APEC provide the de
ap4565gm.pdf
AP4565GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETSimple Drive Requirement N-CH BVDSS 40V D2D2D2Low On-resistance D2 RDS(ON) 25m D1D1D1D1Fast Switching Performance ID 7.6A G2G2P-CH BVDSS -40VS2S2G1SO-8 S1G1RDS(ON) 33mSO-8 S1Descri
ap4563gm.pdf
AP4563GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD2D2 Fast Switching Performance RDS(ON) 30mD1D1 RoHS Compliant ID 6.7AG2P-CH BVDSS -40VS2G1S1SO-8RDS(ON) 36mDescription ID -6AThe Advanced Power MOSFETs from APEC provide thedesigner with the best
ap4563gh-hf.pdf
AP4563GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 8AS1G1S2 RoHS Compliant P-CH BVDSS -40VG2RDS(ON) 36mTO-252-4LDescription ID -7.3AAdvanced Power MOSFETs from APEC provide the de
ap4563agh-hf.pdf
AP4563AGH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 20m Fast Switching Performance ID 9.6AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -40VG1S2RDS(ON) 36mG2Description ID -7.3ATO-252-4LD1D2Advanced Power MOSFE
ap4563agh.pdf
AP4563AGH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 20m Fast Switching Performance ID 9.6AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -40VG1S2RDS(ON) 36mG2Description ID -7.3ATO-252-4LAdvanced Power MOSFETs from
ap4565gm-30v.pdf
AP4565GM&-30Vwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 a
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918