2SK659 Specs and Replacement
Type Designator: 2SK659
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO220
2SK659 substitution
- MOSFET ⓘ Cross-Reference Search
2SK659 datasheet
2sk659.pdf
isc N-Channel MOSFET Transistor 2SK659 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
2sk655.pdf
Silicon MOS FETs (Small Signal) 2SK655 2SK655 Silicon N-Channel MOS Unit mm For switching 4.0 0.2 Features High-speed switching Radial taping possible marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) 1.27 1.27 Symbol Unit Parameter Rating 2.54 0.15 1 Source VDS V Drain-Source voltage 50 2 Drain VGSO V Gate-Source voltage 8 3 Gate ID mA Drain current ... See More ⇒
Detailed specifications: 2SK2552, 2SK2645-01MR, 2SK2654-01, 2SK2761-01MR, 2SK2765-01, 2SK3496-01MR, 2SK3683-01MR, 2SK4075, IRF830, AP4880BGM-HF, AP4880GM, AP4920GM-HF, AP4924GM, AP4933GM-HF, AP4936GM, AP4951GM, AP4951GM-HF
Keywords - 2SK659 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK4201-S19-AY | NDP06N60Z
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