isc N-Channel MOSFET Transistor 2SK659FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Silicon MOS FETs (Small Signal) 2SK6552SK655Silicon N-Channel MOSUnit : mmFor switching4.0 0.2 Features High-speed switching Radial taping possiblemarking1 2 3 Absolute Maximum Ratings (Ta = 25C)1.27 1.27Symbol UnitParameter Rating2.54 0.151 : SourceVDS VDrain-Source voltage 502 : DrainVGSO VGate-Source voltage 83 : GateID mADrain current

Silicon MOS FETs (Small Signal) 2SK6562SK656Silicon N-Channel MOSUnit : mmFor switching4.0 0.2 Features High-speed switching Small drive current owing to high input impedance Extremely high electrostatic destruction voltagemarking1 2 3 Absolute Maximum Ratings (Ta = 25C)1.27 1.27Symbol UnitParameter Rating2.54 0.151 : SourceVDS VDrain-Source voltage 5

Silicon MOS FETs (Small Signal) 2SK6572SK657Silicon N-Channel MOSUnit : mmFor switching6.9 0.1 2.5 0.11.51.5 R0.9 1.0 FeaturesR0.9 High-speed switching Easy automatic- /manual-insertion due to M type package. Self-fix-ing to printed circuits board.0.850.55 0.1 0.45 0.053 2 1 Absolute Maximum Ratings (Ta = 25C)SymbolParameter Rating Unit2.5 2.51

Silicon Junction FETs (Small Signal) 2SK652SK65Silicon N-Channel JunctionUnit : mm4.5 0.1 2.0 0.2For impedance conversion in low frequency1.0For electret capacitor microphone Features Diode connected between gate and source Low noise voltage0.45 0.05 Absolute Maximum Ratings (Ta = 25C)2.54 0.8 0.1Parameter Symbol Rating Unit1 2 31 : DrainDrain-Source