2SK659 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK659 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

Silicon MOS FETs (Small Signal) 2SK655 2SK655 Silicon N-Channel MOS Unit mm For switching 4.0 0.2 Features High-speed switching Radial taping possible marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) 1.27 1.27 Symbol Unit Parameter Rating 2.54 0.15 1 Source VDS V Drain-Source voltage 50 2 Drain VGSO V Gate-Source voltage 8 3 Gate ID mA Drain current

Silicon MOS FETs (Small Signal) 2SK656 2SK656 Silicon N-Channel MOS Unit mm For switching 4.0 0.2 Features High-speed switching Small drive current owing to high input impedance Extremely high electrostatic destruction voltage marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) 1.27 1.27 Symbol Unit Parameter Rating 2.54 0.15 1 Source VDS V Drain-Source voltage 5

Silicon MOS FETs (Small Signal) 2SK657 2SK657 Silicon N-Channel MOS Unit mm For switching 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High-speed switching Easy automatic- /manual-insertion due to M type package. Self-fix- ing to printed circuits board. 0.85 0.55 0.1 0.45 0.05 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Symbol Parameter Rating Unit 2.5 2.5 1

Silicon Junction FETs (Small Signal) 2SK65 2SK65 Silicon N-Channel Junction Unit mm 4.5 0.1 2.0 0.2 For impedance conversion in low frequency 1.0 For electret capacitor microphone Features Diode connected between gate and source Low noise voltage 0.45 0.05 Absolute Maximum Ratings (Ta = 25 C) 2.54 0.8 0.1 Parameter Symbol Rating Unit 1 2 3 1 Drain Drain-Source