FRF9150H Specs and Replacement

Type Designator: FRF9150H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 620 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO254AA

FRF9150H substitution

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FRF9150H datasheet

 7.1. Size:48K  intersil
 frf9150.pdf pdf_icon

FRF9150H

FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 23A, -100V, rDS(ON) = 0.140 TO-254AA Second Generation Rad Hard MOSFET Results From New Design Concepts G Gamma - Meets Pre-RAD Specifications to 100K RAD (Si) S D - Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) - Performance Permits Limited ... See More ⇒

Detailed specifications: FRF250R, FRF254D, FRF254H, FRF254R, FRF450D, FRF450H, FRF450R, FRF9150D, 5N65, FRF9150R, FRF9250D, FRF9250H, FRF9250R, FRK150D, FRK150H, FRK150R, FRK160D

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