FRF9150H MOSFET. Datasheet pdf. Equivalent
Type Designator: FRF9150H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 620 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO254AA
FRF9150H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRF9150H Datasheet (PDF)
frf9150.pdf
FRF9150D, FRF9150R,FRF9150H23A, -100V, 0.140 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 23A, -100V, rDS(ON) = 0.140TO-254AA Second Generation Rad Hard MOSFET Results From New Design ConceptsG Gamma - Meets Pre-RAD Specifications to 100K RAD (Si)SD- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)- Performance Permits Limited
Datasheet: FRF250R , FRF254D , FRF254H , FRF254R , FRF450D , FRF450H , FRF450R , FRF9150D , AON7410 , FRF9150R , FRF9250D , FRF9250H , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D .
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