2SK727-01 Datasheet and Replacement
Type Designator: 2SK727-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SC-65
2SK727-01 substitution
2SK727-01 Datasheet (PDF)
2sk727.pdf

isc N-Channel MOSFET Transistor 2SK727DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
Datasheet: 2SK662 , 2SK663 , 2SK664 , 2SK665 , 2SK669 , 2SK704 , 2SK709 , 2SK720A , STP80NF70 , 2SK787 , AP6680AGM , AP6680BGM-HF , AP6680BGYT-HF , AP6680CGYT-HF , AP6680SGYT-HF , AP6683GYT-HF , AP6800GEO .
History: HY3008B | CEP4060A | APM4470K | H7N0603DL | AM2301P | MTDN5820Z6 | DMN3007LSS
Keywords - 2SK727-01 MOSFET datasheet
2SK727-01 cross reference
2SK727-01 equivalent finder
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History: HY3008B | CEP4060A | APM4470K | H7N0603DL | AM2301P | MTDN5820Z6 | DMN3007LSS



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