AP6910GSM-HF Specs and Replacement

Type Designator: AP6910GSM-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30(28) nS

Cossⓘ - Output Capacitance: 135(325) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0158 Ohm

Package: SO-8

AP6910GSM-HF substitution

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AP6910GSM-HF datasheet

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 ap6910gsm-hf.pdf pdf_icon

AP6910GSM-HF

AP6910GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance CH-1 BVDSS 30V S1/D2 S1/D2 S1/D2 Fast Switching Characteristic RDS(ON) 15.8m G1 Surface Mount Package ID 9A S2 G2 RoHS Compliant & Halogen-Free CH-2 BVDSS 30V D1 SO-8 D1 RDS(ON) 15.8m Description ID 9A D1 Advanced Power MOSFETs... See More ⇒

Detailed specifications: 2SK881, 2SK882, 2SK941, 2SK951-MR, AP6902AGH-HF, AP6903GH-HF, AP6904GH-HF, AP6906GH-HF, AO4468, AP6920GMT-HF, AP6921GMT-HF, AP6922GMT-HF, AP6923GMT-HF, AP6924GEY, AP6925GY, AP6928GMT-HF, AP6930GMT-HF

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