All MOSFET. AP6910GSM-HF Datasheet

 

AP6910GSM-HF Datasheet and Replacement


   Type Designator: AP6910GSM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30(28) nS
   Cossⓘ - Output Capacitance: 135(325) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0158 Ohm
   Package: SO-8
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AP6910GSM-HF Datasheet (PDF)

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AP6910GSM-HF

AP6910GSM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance CH-1 BVDSS 30VS1/D2S1/D2S1/D2 Fast Switching Characteristic RDS(ON) 15.8mG1 Surface Mount Package ID 9AS2G2 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VD1SO-8 D1RDS(ON) 15.8mDescription ID 9AD1Advanced Power MOSFETs

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History: CHM85A3PAGP | SFFX054Z | TK7P65W

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