AP6930GMT-HF Datasheet and Replacement
Type Designator: AP6930GMT-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 195 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: PMPAK5X6
AP6930GMT-HF substitution
AP6930GMT-HF Datasheet (PDF)
ap6930gmt-hf.pdf

AP6930GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.5m RoHS Compliant & Halogen-Free ID 20AD1 D1 D2 D2D1D1D2DescriptionD2Advanced Power MOSFETs from APEC providethe designer with the best combination of fastswitching, rugge
Datasheet: AP6910GSM-HF , AP6920GMT-HF , AP6921GMT-HF , AP6922GMT-HF , AP6923GMT-HF , AP6924GEY , AP6925GY , AP6928GMT-HF , IRF540N , AP6941GMT-HF , AP6942GMT-HF , AP6950GYT-HF , AP6970GN2-HF , AP6980GN2-HF , AP6982GM , AP6982GN2-HF , AP6983GN2-HF .
Keywords - AP6930GMT-HF MOSFET datasheet
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History: MTNK3N3 | NTB75N06G



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