AP6930GMT-HF Specs and Replacement

Type Designator: AP6930GMT-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: PMPAK5X6

AP6930GMT-HF substitution

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AP6930GMT-HF datasheet

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 ap6930gmt-hf.pdf pdf_icon

AP6930GMT-HF

AP6930GMT-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.5m RoHS Compliant & Halogen-Free ID 20A D1 D1 D2 D2 D1 D1 D2 Description D2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒

Detailed specifications: AP6910GSM-HF, AP6920GMT-HF, AP6921GMT-HF, AP6922GMT-HF, AP6923GMT-HF, AP6924GEY, AP6925GY, AP6928GMT-HF, IRF540, AP6941GMT-HF, AP6942GMT-HF, AP6950GYT-HF, AP6970GN2-HF, AP6980GN2-HF, AP6982GM, AP6982GN2-HF, AP6983GN2-HF

Keywords - AP6930GMT-HF MOSFET specs

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