All MOSFET. AP6970GN2-HF Datasheet

 

AP6970GN2-HF Datasheet and Replacement


   Type Designator: AP6970GN2-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: DFN2X2
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AP6970GN2-HF Datasheet (PDF)

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AP6970GN2-HF

AP6970GN2-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 S2D1 Lower Gate Charge BVDSS 20V Bottom Exposed DFN RDS(ON) 45m Lower Profile ID 4.5A Halogen Free & RoHS Compliant ProductS1 G1 D2DescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge

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