All MOSFET. FRK160H Datasheet

 

FRK160H Datasheet and Replacement


   Type Designator: FRK160H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 900 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO204AE
 

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FRK160H Datasheet (PDF)

 8.1. Size:48K  intersil
 frk160.pdf pdf_icon

FRK160H

FRK160D, FRK160R,FRK160H50A, 100V, 0.040 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 50A, 100V, RDS(on) = 0.040TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

Datasheet: FRF9150R , FRF9250D , FRF9250H , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , 20N50 , FRK160R , FRK250D , FRK250H , FRK250R , FRK254D , FRK254H , FRK254R , FRK260D .

History: CSD17579Q5A

Keywords - FRK160H MOSFET datasheet

 FRK160H cross reference
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