FRK160H Datasheet. Specs and Replacement

Type Designator: FRK160H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 900 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO204AE

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FRK160H datasheet

 8.1. Size:48K  intersil
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FRK160H

FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 50A, 100V, RDS(on) = 0.040 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

Detailed specifications: FRF9150R, FRF9250D, FRF9250H, FRF9250R, FRK150D, FRK150H, FRK150R, FRK160D, NCEP15T14, FRK160R, FRK250D, FRK250H, FRK250R, FRK254D, FRK254H, FRK254R, FRK260D

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