All MOSFET. FRK160H Datasheet


FRK160H MOSFET. Datasheet pdf. Equivalent

Type Designator: FRK160H

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 900 nS

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO204AE

FRK160H Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FRK160H Datasheet (PDF)

 8.1. Size:48K  intersil


FRK160D, FRK160R,FRK160H50A, 100V, 0.040 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 50A, 100V, RDS(on) = 0.040TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

Datasheet: FRF9150R , FRF9250D , FRF9250H , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , AO3407 , FRK160R , FRK250D , FRK250H , FRK250R , FRK254D , FRK254H , FRK254R , FRK260D .


Back to Top