All MOSFET. AP80N30W Datasheet

 

AP80N30W MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP80N30W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 117 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 525 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
   Package: TO-3P

 AP80N30W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP80N30W Datasheet (PDF)

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 ap80n30w.pdf

AP80N30W AP80N30W

AP80N30WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 66m High Speed Switching ID 36AGSDescriptionAP80N30 from APEC provide the designer with the best combination offast switching, low on-resistance and cost-effectiveness.GThe TO-3P package is

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 ap80n04q.pdf

AP80N30W AP80N30W

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 ap80n04g.pdf

AP80N30W AP80N30W

 9.3. Size:175K  ape
 ap80n03gp.pdf

AP80N30W AP80N30W

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

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History: 2SK2791 | FDS6675BZ | DMN3112S | HYG064N08NA1P | VS3603GPMT

 

 
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