AP80N30W Datasheet and Replacement
Type Designator: AP80N30W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 525 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO-3P
AP80N30W substitution
AP80N30W Datasheet (PDF)
ap80n30w.pdf

AP80N30WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 66m High Speed Switching ID 36AGSDescriptionAP80N30 from APEC provide the designer with the best combination offast switching, low on-resistance and cost-effectiveness.GThe TO-3P package is
ap80n03gp.pdf

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low
Datasheet: AP75T10AGP , AP75T10BGP-HF , AP75T10GI-HF , AP75T10GP-HF , AP75T10GS , AP75T12GI-HF , AP75T12GP-HF , AP78T10GP-HF , IRF1407 , AP80T10GP-HF , AP80T10GR-HF , AP83T02GH-HF , AP83T02GJ-HF , AP83T03AGH-HF , AP83T03AGMT-HF , AP83T03GH-HF , AP83T03GJ-HF .
History: NTD4969N-1G | IPAN60R210PFD7S | MMBFJ111 | HY15P03S | KF9N50F | 2SK1057 | NCE80T900F
Keywords - AP80N30W MOSFET datasheet
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History: NTD4969N-1G | IPAN60R210PFD7S | MMBFJ111 | HY15P03S | KF9N50F | 2SK1057 | NCE80T900F



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