All MOSFET. AP80N30W Datasheet

 

AP80N30W Datasheet and Replacement


   Type Designator: AP80N30W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 525 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
   Package: TO-3P
 

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AP80N30W Datasheet (PDF)

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AP80N30W

AP80N30WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 66m High Speed Switching ID 36AGSDescriptionAP80N30 from APEC provide the designer with the best combination offast switching, low on-resistance and cost-effectiveness.GThe TO-3P package is

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AP80N30W

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AP80N30W

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AP80N30W

AP80N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP80N03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the low

Datasheet: AP75T10AGP , AP75T10BGP-HF , AP75T10GI-HF , AP75T10GP-HF , AP75T10GS , AP75T12GI-HF , AP75T12GP-HF , AP78T10GP-HF , IRF1407 , AP80T10GP-HF , AP80T10GR-HF , AP83T02GH-HF , AP83T02GJ-HF , AP83T03AGH-HF , AP83T03AGMT-HF , AP83T03GH-HF , AP83T03GJ-HF .

History: NTD4969N-1G | IPAN60R210PFD7S | MMBFJ111 | HY15P03S | KF9N50F | 2SK1057 | NCE80T900F

Keywords - AP80N30W MOSFET datasheet

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