AP80N30W Specs and Replacement
Type Designator: AP80N30W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ -
Output Capacitance: 525 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
Package: TO-3P
- MOSFET ⓘ Cross-Reference Search
AP80N30W datasheet
..1. Size:95K ape
ap80n30w.pdf 
AP80N30W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 66m High Speed Switching ID 36A G S Description AP80N30 from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G The TO-3P package is ... See More ⇒
9.3. Size:175K ape
ap80n03gp.pdf
AP80N03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D Fast Switching Characteristic RDS(ON) 8m Simple Drive Requirement ID 80A G RoHS Compliant & Halogen-Free S Description AP80N03 series are from Advanced Power innovated design and silicon G process technology to achieve the low... See More ⇒
9.9. Size:1395K cn apm
ap80n07f.pdf
AP80N07F 68V N-Channel Enhancement Mode MOSFET Description The AP80N07F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
9.10. Size:1135K cn apm
ap80n02nf.pdf
AP80N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80A DS D R ... See More ⇒
9.11. Size:1548K cn apm
ap80n07p ap80n07t.pdf
AP80N07PIT 68V N-Channel Enhancement Mode MOSFET Description The AP80N07P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with Hight EAS. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
9.12. Size:2631K cn apm
ap80n06d.pdf
AP80N06D 60V N-Channel Enhancement Mode MOSFET Description The AP80N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80 A DS D R ... See More ⇒
9.13. Size:1459K cn apm
ap80n07d.pdf
AP80N07D 68V N-Channel Enhancement Mode MOSFET Description The AP80N07D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 68V I =80A DS D R ... See More ⇒
9.14. Size:2440K cn apm
ap80n06nf.pdf
AP80N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP80N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =80A DS D R ... See More ⇒
9.15. Size:1838K cn apm
ap80n03df.pdf
AP80N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒
9.16. Size:1216K cn apm
ap80n03d.pdf
AP80N03D 30V N-Channel Enhancement Mode MOSFET Description The AP80N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80 A DS D R ... See More ⇒
9.17. Size:1407K cn apm
ap80n04df.pdf
AP80N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP80N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒
9.18. Size:2217K cn apm
ap80n02df.pdf
AP80N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP80N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =80 A DS D R ... See More ⇒
9.19. Size:1583K cn apm
ap80n03nf.pdf
AP80N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP80N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =80A DS D R ... See More ⇒
9.20. Size:1651K cn apm
ap80n04d.pdf
AP80N04D 40V N-Channel Enhancement Mode MOSFET Description The AP80N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =80 A DS D R ... See More ⇒
9.21. Size:3601K cn apm
ap80n08nf.pdf
AP80N08NF 80V N- Channel Enhancement Mode MOSFET Description The AP80N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS D R ... See More ⇒
9.22. Size:1599K cn apm
ap80n10p ap80n10t.pdf
AP80N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP80N10P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =80A DS D R ... See More ⇒
9.23. Size:2412K cn apm
ap80n08d.pdf
AP80N08D 80V N-Channel Enhancement Mode MOSFET Description The AP80N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =80A DS D R ... See More ⇒
Detailed specifications: AP75T10AGP, AP75T10BGP-HF, AP75T10GI-HF, AP75T10GP-HF, AP75T10GS, AP75T12GI-HF, AP75T12GP-HF, AP78T10GP-HF, IRFP450, AP80T10GP-HF, AP80T10GR-HF, AP83T02GH-HF, AP83T02GJ-HF, AP83T03AGH-HF, AP83T03AGMT-HF, AP83T03GH-HF, AP83T03GJ-HF
Keywords - AP80N30W MOSFET specs
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