AP88N30W Specs and Replacement

Type Designator: AP88N30W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 142 nS

Cossⓘ - Output Capacitance: 1775 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TO-3P

AP88N30W substitution

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AP88N30W datasheet

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AP88N30W

AP88N30W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 48m High Speed Switching ID 88A G S Description AP88N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is pr... See More ⇒

Detailed specifications: AP85U03GH-HF, AP85U03GM-HF, AP85U03GMT-HF, AP85U03GP-HF, AP86T02GH-HF, AP86T02GJ-HF, AP86T03GH, AP86T03GJ, IRFZ48N, AP90T03GH, AP90T03GI, AP90T03GJ, AP90T03GR, AP90T03GS-HF, AP90T03P, AP90T06GP-HF, AP9120AGH-HF

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.