All MOSFET. AP88N30W Datasheet

 

AP88N30W Datasheet and Replacement


   Type Designator: AP88N30W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 142 nS
   Cossⓘ - Output Capacitance: 1775 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO-3P
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AP88N30W Datasheet (PDF)

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AP88N30W

AP88N30WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 300V Lower On-resistance RDS(ON) 48m High Speed Switching ID 88AGSDescriptionAP88N30 from APEC provide the designer with the best combination of fastswitching , low on-resistance and cost-effectiveness .The TO-3P package is pr

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