All MOSFET. FRK254H Datasheet

 

FRK254H Datasheet and Replacement


   Type Designator: FRK254H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 450 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO204AE
 
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FRK254H Datasheet (PDF)

 8.1. Size:48K  intersil
 frk254.pdf pdf_icon

FRK254H

FRK254D, FRK254R,FRK254H20A, 250V, 0.170 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 20A, 250V, RDS(on) = 0.170TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 9.1. Size:48K  intersil
 frk250.pdf pdf_icon

FRK254H

FRK250D, FRK250R,FRK250H27A, 200V, 0.100 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 27A, 200V, RDS(on) = 0.100TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

 9.2. Size:212K  inchange semiconductor
 frk250.pdf pdf_icon

FRK254H

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FRK250DESCRIPTION27A, 200V, RDS(on) = 0.1Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIt is specially designed and processed toexhibit minimal characteristic changes to total dose and neutronexposures

Datasheet: FRK150R , FRK160D , FRK160H , FRK160R , FRK250D , FRK250H , FRK250R , FRK254D , P0903BDG , FRK254R , FRK260D , FRK260H , FRK260R , FRK264D , FRK264H , FRK264R , FRK460D .

History: TSM8N70CI

Keywords - FRK254H MOSFET datasheet

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