FRK254H Datasheet. Specs and Replacement
Type Designator: FRK254H 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 450 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO204AE
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FRK254H substitution
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FRK254H datasheet
frk254.pdf
FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 20A, 250V, RDS(on) = 0.170 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
frk250.pdf
FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 27A, 200V, RDS(on) = 0.100 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
frk250.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FRK250 DESCRIPTION 27A, 200V, RDS(on) = 0.1 Second Generation Rad Hard MOSFET Results From New Design Concepts Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures... See More ⇒
Detailed specifications: FRK150R, FRK160D, FRK160H, FRK160R, FRK250D, FRK250H, FRK250R, FRK254D, 10N65, FRK254R, FRK260D, FRK260H, FRK260R, FRK264D, FRK264H, FRK264R, FRK460D
Keywords - FRK254H MOSFET specs
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