AP9510GM Specs and Replacement

Type Designator: AP9510GM

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9(5.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7(8) nS

Cossⓘ - Output Capacitance: 160(180) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.055) Ohm

Package: SO-8

AP9510GM substitution

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AP9510GM datasheet

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AP9510GM

AP9510GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D2 D2 Low On-resistance RDS(ON) 28m D1 D1 Fast Switching Performance ID 6.9A G2 P-CH BVDSS -30V S2 G1 SO-8 S1 RDS(ON) 55m Description ID -5.3A The Advanced Power ... See More ⇒

Detailed specifications: AP9479GM-HF, AP9487GM-HF, AP94T07GH-HF, AP94T07GJ-HF, AP94T07GMT-HF, AP94T07GP1-HF, AP94T07GP-HF, AP94T07GS-HF, MMIS60R580P, AP9560GH-HF, AP9560GP-HF, AP9560GS-HF, AP9561AGH-HF, AP9561AGI-HF, AP9561AGJ-HF, AP9561AGM-HF, AP9561GH-HF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs