FRK9160H Specs and Replacement
Type Designator: FRK9160H
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 900 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO204AE
FRK9160H substitution
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FRK9160H datasheet
frk9160.pdf
FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 40A, -100V, RDS(on) = 0.085 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒
frk9150.pdf
FRK9150D, FRK9150R, FRK9150H 26A, -100V, 0.125 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 26A, -100V, RDS(on) = 0.125 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒
Detailed specifications: FRK264R, FRK460D, FRK460H, FRK460R, FRK9150D, FRK9150H, FRK9150R, FRK9160D, P60NF06, FRK9160R, FRK9260D, FRK9260H, FRK9260R, FRL130D, FRL130H, FRL130R, FRL230D
Keywords - FRK9160H MOSFET specs
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