AP95N25W Specs and Replacement
Type Designator: AP95N25W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 92 nS
Cossⓘ - Output Capacitance: 1505 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO-3P
AP95N25W substitution
- MOSFET ⓘ Cross-Reference Search
AP95N25W datasheet
ap95n25w.pdf
AP95N25W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 250V Lower On-resistance RDS(ON) 55m High Speed Switching ID 50A G S Description AP95N25 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is pr... See More ⇒
Detailed specifications: AP9581GS-HF, AP9585GH, AP9585GJ, AP9585GM, AP9585GM-HF, AP9587GH-HF, AP9587GJ-HF, AP9591GP-HF, 75N75, AP95T06AGP, AP95T06BGP, AP95T06GP-HF, AP95T06GS-HF, AP95T07AGP-HF, AP95T07BGP-HF, AP95T07BGS-HF, AP95T07GP-HF
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