All MOSFET. FRK9260H Datasheet

 

FRK9260H Datasheet and Replacement


   Type Designator: FRK9260H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 800 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO204AE
 

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FRK9260H Datasheet (PDF)

 7.1. Size:53K  intersil
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FRK9260H

FRK9260D, FRK9260R,FRK9260H26A, -200V, 0.200 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 26A, -200V, RDS(on) = 0.200TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD

Datasheet: FRK460R , FRK9150D , FRK9150H , FRK9150R , FRK9160D , FRK9160H , FRK9160R , FRK9260D , IRFZ46N , FRK9260R , FRL130D , FRL130H , FRL130R , FRL230D , FRL230H , FRL230R , FRL230R4 .

History: VBM165R18 | IPP80N06S2-07 | ZVN3306ASTOB | IPB065N10N3 | SIHFD9024 | SIB404DK | SSM9926TGO

Keywords - FRK9260H MOSFET datasheet

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