FRK9260H Specs and Replacement

Type Designator: FRK9260H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 800 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO204AE

FRK9260H substitution

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FRK9260H datasheet

 7.1. Size:53K  intersil
 frk9260.pdf pdf_icon

FRK9260H

FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 26A, -200V, RDS(on) = 0.200 TO-204AE Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

Detailed specifications: FRK460R, FRK9150D, FRK9150H, FRK9150R, FRK9160D, FRK9160H, FRK9160R, FRK9260D, IRFB31N20D, FRK9260R, FRL130D, FRL130H, FRL130R, FRL230D, FRL230H, FRL230R, FRL230R4

Keywords - FRK9260H MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.