All MOSFET. APS04N60H-HF Datasheet

 

APS04N60H-HF Datasheet and Replacement


   Type Designator: APS04N60H-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 620 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-252
 

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APS04N60H-HF Datasheet (PDF)

 ..1. Size:57K  ape
 aps04n60h-hf.pdf pdf_icon

APS04N60H-HF

APS04N60H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAPS04N60 series are specially designed as main switching devices foruniversal 90~265VAC off-line AC/DC con

 5.1. Size:198K  ape
 aps04n60h.pdf pdf_icon

APS04N60H-HF

APS04N60H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 620VD Fast Switching Characteristic RDS(ON) 2.5 Simple Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDescriptionAPS04N60 series are from Advanced Power innovated design andGsilicon process technology to achieve the l

Datasheet: AP9T16GH , AP9T16GJ , AP9T18GEH , AP9T18GEJ , AP9T18GH , AP9T18GJ , AP9T19GJ , APA2N70K-HF , IRF2807 , IRF830I-HF , IRF840I , 2SK3467 , 2SK3505 , 2SK3451-01MR , 2SK3326 , 2SK4101LS , 2SK4212 .

History: QN3107M6N | H2302N

Keywords - APS04N60H-HF MOSFET datasheet

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