All MOSFET. 3N165 Datasheet

 

3N165 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 3N165
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 125 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
   Package: TO-99

 3N165 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3N165 Datasheet (PDF)

 ..1. Size:19K  linear-systems
 3n165 3n166.pdf

3N165 3N165

3N165, 3N166MONOLITHIC DUAL P-CHANNELENHANCEMENT MODE MOSFETLinear Integrated SystemsFEATURESVERY HIGH INPUT IMPEDANCEHIGH GATE BREAKDOWNULTRA LOW LEAKAGELOW CAPACITANCEABSOLUTE MAXIMUM RATINGS (NOTE 1)(TA= 25C unless otherwise noted)1 7CDrain-Source or Drain-Gate Voltage (NOTE 2)G1 G23N165 40 V3 53N166 30 VD1 D2STransient G-S Voltage (NOTE 3) 125 V

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BLF175 | 2SK975

 

 
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