3N165 Specs and Replacement

Type Designator: 3N165

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 125 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm

Package: TO-99

3N165 substitution

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3N165 datasheet

 ..1. Size:19K  linear-systems
 3n165 3n166.pdf pdf_icon

3N165

3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25 C unless otherwise noted) 1 7 C Drain-Source or Drain-Gate Voltage (NOTE 2) G1 G2 3N165 40 V 3 5 3N166 30 V D1 D2 S Transient G-S Voltage (NOTE 3) 125 V ... See More ⇒

Detailed specifications: 2SK3430-S, 2SK3430-Z, 2SK3523-01R, 2SK3525-01MR, 2SK3637, 2SK4096LS, BUZ334, 3N161, IRLZ44N, 3N166, 3SK199, 3SK207, 3SK225, 3SK226, 3SK232, 3SK249, 3SK256

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.