All MOSFET. 3N165 Datasheet

 

3N165 Datasheet and Replacement


   Type Designator: 3N165
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 125 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
   Package: TO-99
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3N165 Datasheet (PDF)

 ..1. Size:19K  linear-systems
 3n165 3n166.pdf pdf_icon

3N165

3N165, 3N166MONOLITHIC DUAL P-CHANNELENHANCEMENT MODE MOSFETLinear Integrated SystemsFEATURESVERY HIGH INPUT IMPEDANCEHIGH GATE BREAKDOWNULTRA LOW LEAKAGELOW CAPACITANCEABSOLUTE MAXIMUM RATINGS (NOTE 1)(TA= 25C unless otherwise noted)1 7CDrain-Source or Drain-Gate Voltage (NOTE 2)G1 G23N165 40 V3 53N166 30 VD1 D2STransient G-S Voltage (NOTE 3) 125 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RJK0331DPB-00

Keywords - 3N165 MOSFET datasheet

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