3SK232 Specs and Replacement

Type Designator: 3SK232

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12.5 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Package: 2-3J1A

3SK232 substitution

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3SK232 datasheet

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 3sk232.pdf pdf_icon

3SK232

3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance. Low reverse transfer capacitance. C = 20 fF (typ.) rss Low noise figure. NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.... See More ⇒

Detailed specifications: BUZ334, 3N161, 3N165, 3N166, 3SK199, 3SK207, 3SK225, 3SK226, IRF3710, 3SK249, 3SK256, 3SK257, 3SK258, 3SK259, 3SK260, 3SK291, 3SK292

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