2N4338 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N4338
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.3 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 1 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 2500 Ohm
Package: TO-18
2N4338 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N4338 Datasheet (PDF)
1.1. 2n4338 2n4339 2n4340 2n4341.pdf 
Size:75K _vishay
2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 -0.3 to -1 -50 0.6 0.6 2N4339 -0.6 to -1.8 -50 0.8 1.5 2N4340 -1 to -3 -50 1.3 3.6 2N4341 -2 to -6 -50 2 9 FEATURES BENEFITS APPLICATIONS D Low Cutoff Voltage: 2N4338 <1 V D Full Performance from Low-Voltage D High-Gain, Low-Noise Amplifiers
1.2. 2n4338 2n4339 2n4340 2n4341.pdf Size:19K _calogic
N-Channel JFET Low Noise Amplifier CORPORATION 2N4338 2N4341 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Exceptionally High Figure of Merit Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
5.1. 2n433 2n434.pdf Size:304K _general_electric
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
