2N4338
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N4338
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 1
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.3
V
|Id|ⓘ - Maximum Drain Current: 0.05
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2500
Ohm
Package:
TO-18
2N4338
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N4338
Datasheet (PDF)
..1. Size:75K vishay
2n4338 2n4339 2n4340 2n4341.pdf
2N4338/4339/4340/4341Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)2N4338 -0.3 to -1 -50 0.6 0.62N4339 -0.6 to -1.8 -50 0.8 1.52N4340 -1 to -3 -50 1.3 3.62N4341 -2 to -6 -50 2 9FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: 2N4338
..2. Size:19K calogic
2n4338 2n4339 2n4340 2n4341.pdf
N-Channel JFETLow Noise AmplifierCORPORATION2N4338 2N4341FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Exceptionally High Figure of Merit Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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